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First-principles study of band alignments in the p-type hosts BaM2X2 (M = Cu, Ag; X = S, Se)

机译:p型宿主Bam2X2(m。)的带对齐的第一性原理研究   = Cu,ag; X = s,se)

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摘要

The electronic structures of four semiconductor compounds BaCu2S2, BaCu2Se2,BaAg2S2, and BaAg2Se2 are studied by density functional theory using bothsemi-local and hybrid functionals. The ionization energies and electronaffinities were determined by aligning the electronic states with the vacuumlevel by calculating the electrostatic profile within a supercell slab model.The ionization energy and electron affinity of the compounds were calculatedusing the Heyd-Scuseria-Ernzerhof (HSE) functionals and range from 4.5 to 5.4eV and 3.1 to 3.4 eV, respectively. The replacement of Cu by Ag slightlyincreases the ionization energy and electron affinity, while the replacement ofS by Se decreases the ionization energy but slightly increases the electronaffinity. Overall, the low ionization energies and small electron affinitiessuggest that these compounds possess good p-type doping propensities. The bandgaps are somewhat small to be ideal candidates for transparent semiconductingbehavior. The replacement of Cu with Ag in the barium sulfide compounds canincrease the band gap from 1.62 eV to 2.01 eV.
机译:利用密度泛函理论,利用半局域和混合函数理论研究了四种半导体化合物BaCu2S2,BaCu2Se2,BaAg2S2和BaAg2Se2的电子结构。通过计算超级电池平板模型中的静电分布,通过将电子状态与真空水平对齐来确定电离能和电子亲和力。使用Heyd-Scuseria-Ernzerhof(HSE)官能度计算化合物的电离能和电子亲和力,范围为分别为4.5至5.4eV和3.1至3.4 eV。用Ag替代Cu可以稍微提高电离能和电子亲和力,而用Se替代S可以降低电离能,但可以稍微提高电子亲和力。总体而言,低电离能和小的电子亲和力表明这些化合物具有良好的p型掺杂倾向。带隙很小,是透明半导体行为的理想选择。硫化钡化合物中的Ag取代Cu可以将带隙从1.62 eV增加到2.01 eV。

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